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IGB50N60T trenchstop ? series p 1 rev. 2.5 04.03.2009 low loss igbt in trenchstop ? technology ? very low v ce(sat) 1.5 v (typ.) ? maximum junction temperature 175 c ? short circuit withstand time ? 5 s ? designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners ? trenchstop ? technology for 600 v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed ? positive temperature coefficient in v ce(sat) ? low emi ? low gate charge ? pb-free lead plating; rohs compliant ? qualified according to jedec 1 for target applications ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ),tj=25c t j,max marking package IGB50N60T 600 v 50 a 1.5 v 175 c g50t60 pg-to-263-3-2 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current, limited by t jmax t c = 25 c t c = 100 c i c 100 50 pulsed collector current, t p limited by t jmax i cpuls 150 turn off safe operating area ( v ce 600v, t j 175 c) - 150 a gate-emitter voltage v ge 20 v short circuit withstand time 2) v ge = 15v, v cc 400v, t j 150 c t sc 5 s power dissipation t c = 25 c p tot 333 w operating junction temperature t j -40...+175 storage temperature t stg -55...+175 soldering temperature (reflow soldering, msl1) - 260 c 1 j-std-020 and jesd-022 2) allowed number of short circuits: <10 00; time between short circuits: >1s. g c e pg-to-263-3-2
IGB50N60T trenchstop ? series p 2 rev. 2.5 04.03.2009 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 0.45 thermal resistance, junction ? ambient r thja 6cm2 cu 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.2ma 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =50a t j =25 c t j =175 c - - 1.5 1.9 2.0 - gate-emitter threshold voltage v ge(th) i c =0.8ma, v ce = v ge 4.1 4.9 5.7 v zero gate voltage collector current i ces v ce =600v , v ge =0v t j =25 c t j =175 c - - - - 40 1000 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =50a - 31 - s integrated gate resistor r gint - ? dynamic characteristic input capacitance c iss - 3140 - output capacitance c oss - 200 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 93 - pf gate charge q gate v cc =480v, i c =50a v ge =15v - 310 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7 - nh short circuit collector current 1) i c(sc) v ge =15v, t sc 5 s v cc = 400v, t j 150 c - 458.3 - a 1) allowed number of short circuits: <1 000; time between short circuits: >1s.
IGB50N60T trenchstop ? series p 3 rev. 2.5 04.03.2009 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 26 - rise time t r - 29 - turn-off delay time t d(off) - 299 - fall time t f - 29 - ns turn-on energy e on - 1.2 - turn-off energy e off - 1.4 - total switching energy e ts t j =25 c, v cc =400v, i c =50a, v ge =0/15v, r g = 7 ? , l 1) =103nh, c 1) =39pf energy losses include ?tail? and diode reverse recovery. 2) - 2.6 - mj switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 27 - rise time t r - 33 - turn-off delay time t d(off) - 341 - fall time t f - 55 - ns turn-on energy e on - 1.8 - turn-off energy e off - 1.8 - total switching energy e ts t j =175 c, v cc =400v, i c =50a, v ge =0/15v, r g = 7 ? l 1) =103nh, c 1) =39pf energy losses include ?tail? and diode reverse recovery. 2) - 3.6 - mj 1) leakage inductance l a nd stray capacity c due to dynamic test circuit in figure e. 2) includes reverse recovery losses from ikw50n 60t due to dynamic test circuit in figure e.
IGB50N60T trenchstop ? series p 4 rev. 2.5 04.03.2009 i c , collector current 100hz 1khz 10khz 100khz 0a 20a 40a 60a 80a 1 00a 1 20a 1 40a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 1a 10a 100a 10s 1ms dc t p =2s 50s 10ms f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 175 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 7 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 175 c; v ge =15v) p tot , power dissipation 25c 50c 75c 100c 125c 150c 0w 50w 100w 150w 200w 250w 300w i c , collector current 25c 75c 125c 0a 20a 40a 60a 80a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 175 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 175 c) i c i c
IGB50N60T trenchstop ? series p 5 rev. 2.5 04.03.2009 i c , collector current 0v 1v 2v 3v 0a 20a 40a 60a 80a 100a 120a 15v 7v 9v 11v 13v v ge =20v i c , collector current 0v 1v 2v 3v 4v 0a 20a 40a 60a 80a 100a 120a 15v 13v 7v 9v 11v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 175c) i c , collector current 0v 2v 4v 6v 8v 0a 20a 40a 60a 80a 25c t j =175c v ce(sat), collector - emitt saturation voltage 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 2.5v i c =50a i c =100a i c =25a v ge , gate-emitter voltage t j , junction temperature figure 7. typical transfer characteristic (v ce =20v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
IGB50N60T trenchstop ? series p 6 rev. 2.5 04.03.2009 t, switching times 0a 20a 40a 60a 80a 10ns 100ns t r t d(on) t f t d(off) t, switching times 0? 5? 10? 15? 20? 25? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =175c, v ce = 400v, v ge = 0/15v, r g = 7 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 50a, dynamic test circuit in figure e) t, switching times 25c 50c 75c 100c 125c 150c 10ns 100ns t r t d(on) t f t d(off) v ge(th ) , gate - emitt trshold voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v min. typ. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 50a, r g =7 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.8ma)
IGB50N60T trenchstop ? series p 7 rev. 2.5 04.03.2009 e , switching energy losses 0a 20a 40a 60a 80a 0.0mj 2.0mj 4.0mj 6.0mj 8.0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , switching energy losses 0? 10? 20? 0.0mj 1.0mj 2.0mj 3.0mj 4.0mj 5.0mj 6.0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, r g = 7 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 50a, dynamic test circuit in figure e) e , switching energy losses 25c 50c 75c 100c 125c 150c 0.0mj 1.0mj 2.0mj 3.0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , switching energy losses 300v 350v 400v 450v 500v 550v 0mj 1mj 2mj 3mj 4mj e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 50a, r g = 7 ? , dynamic test circuit in figure e) figure 16. typical switching energy losses as a function of collector emitter voltage (inductive load, t j = 175c, v ge = 0/15v, i c = 50a, r g = 7 ? , dynamic test circuit in figure e)
IGB50N60T trenchstop ? series p 8 rev. 2.5 04.03.2009 v ge , gate - emitter voltage 0nc 100nc 200nc 300nc 0v 5v 10v 15v 480v 120v c, capacitance 0v 10v 20v 30v 40v 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c =50 a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) i c ( sc ) , short circuit collector current 12v 14v 16v 18v 0a 100a 200a 300a 400a 500a 600a 700a 800a t sc , short circuit withstand time 10v 11v 12v 13v 14v 0s 2s 4s 6s 8s 10s 12s v ge , gate - emittetr voltage v ge , gate - emitetr voltage figure 19. typical short circuit collector current as a function of gate- emitter voltage ( v ce 400v, t j 150 c) figure 20. short circuit withstand time as a function of gate-emitter voltage ( v ce =600v , start at t j = 25c, t jmax <150c)
IGB50N60T trenchstop ? series p 9 rev. 2.5 04.03.2009 z thjc , transient thermal resistance 1 s10 s100 s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width figure 21. igbt transient thermal resistance ( d = t p / t ) r ,(k/w) , (s) 0.18355 7.425*10 -2 0.12996 8.34*10 -3 0.09205 7.235*10 -4 0.03736 1.035*10 -4 0.00703 4.45*10 -5 c 1 = 1 r 1 r 1 r 2 c 2 = 2 r 2
IGB50N60T trenchstop ? series p 10 rev. 2.5 04.03.2009 pg-to263-3-2
IGB50N60T trenchstop ? series p 11 rev. 2.5 04.03.2009 figure a. definition of switching times figure b. definition of switching losses i rrm 90% i rrm 10% i rrm di /dt f t rr i f i, v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j 1 1 2 2 figure d. thermal equivalent circuit figure e. dynamic test circuit
IGB50N60T trenchstop ? series p 12 rev. 2.5 04.03.2009 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hint s given herein, any typical values stated herein and/or any information regarding the application of the devic e, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without lim itation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may co ntain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered.

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